2
RF Device Data
Freescale Semiconductor
MRF6S19100NR1 MRF6S19100NBR1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
1B (Minimum)
Machine Model (per EIA/JESD22--A115)
A (Minimum)
Charge Device Model (per JESD22--C101)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22--A113, IPC/JEDEC J--STD--020
3
260
°C
Table 5. Electrical Characteristics
(TA
=25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS
=68Vdc,VGS
=0Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS
=28Vdc,VGS
=0Vdc)
IDSS
—
—
1
μAdc
Gate--Source Leakage Current
(VGS
=5Vdc,VDS
=0Vdc)
IGSS
—
—
1
μAdc
On Characteristics
Gate Threshold Voltage
(VDS
=10Vdc,ID
= 330
μAdc)
VGS(th)
1
2
3
Vdc
Gate Quiescent Voltage
(VDD
=28Vdc,ID
= 950 mAdc, Measured in Functional Test)
VGS(Q)
2
2.8
4
Vdc
Drain--Source On--Voltage
(VGS
=10Vdc,ID
=3.3Adc)
VDS(on)
—
0.24
—
Vdc
Dynamic Characteristics
(1)
Reverse Transfer Capacitance
(VDS
=28Vdc±
30 mV(rms)ac @ 1 MHz, VGS
=0Vdc)
Crss
—
1.5
—
pF
Functional Tests
(In Freescale Test Fixture, 50 ohm system) VDD
=28Vdc,IDQ
= 950 mA, Pout
= 22 W Avg., f1 = 1987.5 MHz, f2 =
1990 MHz, 2--Carrier N--CDMA, 1.2288 MHz Channel Bandwidth Carriers. ACPR measured in 30 kHz Channel Bandwidth @
±885 kHz
Offset. IM3 measured in 1.2288 MHz Channel Bandwidth @
±2.5 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain
Gps
13
14.5
16
dB
Drain Efficiency
ηD
24
25.5
36
%
Intermodulation Distortion
IM3
-- 4 7
-- 3 7
-- 3 5
dBc
Adjacent Channel Power Ratio
ACPR
-- 6 0
-- 5 1
-- 4 8
dBc
Input Return Loss
IRL
—
-- 1 2
-- 1 0
dB
1. Part is internally matched both on input and output.
LIFETIME BU
Y
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
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